high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 1 ? ? ? ? WFU5N60/wfd5n60 ?? to \ 252 ? ???? to \ 251 ? 600v n-channel mosfet ? g \ gate,d \ drain,s \ sourse ? features low intrinsic capacitances ? excellent switching characteristics ? extended safe operating area ? unrivalled gate charge : 15 nc (typ.) bvdss=600v,id=4.5a lower r ds(on) : 2.5 ? (max) @vg=10v ? 100% avalanche tested absolute maximum ratings tc=25 unless other wise noted symbol parameter wfu/d5n60 units v dss drain-sourse voltage 600 v i d drain current -continuous (tc=25 ) 4.5 a -continuous (tc=100 ) 1.8 a v gs gate-sourse voltage 30 v e as single plused avanche energy (note1) 240 mj i ar avalanche current (note2) 4 a p d power dissipation (tc=25 ) 44 w t j ,t stg operating and storage temperature range -55 ~ +150 tl maximum lead temperature for soldering purpose,1/8? from case for 5 seconds 300 thermal characteristics ? symbol parameter typ. max units r jc thermal resistance,junction to case -- 2.56 /w r ca thermal resistance,junction to ambient* -- 50 /w r ja thermal resistance,junction to ambient -- 110 /w *when mounted on the minimum pad size recommended (pcb mounted) www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 2 ? ? electrical characteristics tc = 2 5 unless other wise noted ? symbol parameter test condition min. typ. max units off characteristics bv dss drain-sourse breakdown voltage id=250 a vgs=0 600 -- -- v bv dss / t j breakdown voltage temperature conficient i d =250 a,reference to 25 -- 0.6 -- v/ idss zero gate voltage drain current vds=500v, vgs=0v -- -- 1 a vds=480v, tc=125 10 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100 na ? igssr gate-body leakage current, reverse vgs=-30v, vds=0v -- -- -100 na ? on characteristics ? v gs(th) date threshold voltage id=250ua,vds=vgs 2 -- 4 v r ds(on) static drain-sourse on-resistance id=2.25a,vgs=10v -- -- 2.5 ? dynamic characteristics ciss input capacitance vds=25v vgs=0 f=1.0mhz -- 515 670 pf coss output capacitance -- 55 72 pf crss reverse transfer capacitance -- 6.5 8.5 pf switching characteristics ? td(on) turn-on delay time vdd=300v id=4.5a rg=25 (note 3,4) -- 150 30 ns tr turn-on rise time -- 42 90 ns td(off) turn-off delay time -- 38 85 ns tf turn-off fall time -- 46 100 ns qg total gate charge vds=480,vgs=10v id=4.5a (note 3,4) -- 15 19 nc qgs gate-sourse charge -- 2. -- nc qgd gate-drain charge 6.6 -- nc drain-sourse diode characteristics and maximum ratings i s maximun continuous drain-sourse diode forward current -- -- 4.5 a i sm maximun plused drain-sourse diodeforwad current -- -- 18 a v sd drain-sourse diode forward voltage id=4.5a -- -- 1.25 v trr reverse recovery time i s =4.5a,v gs =0v di f /dt=100a/ s (note3) -- 300 -- ns qrr reverse recovery charge -- 2.2 -- c *notes ? 1, l=27.5mh, ias=4a, vdd=50v, rg=25 ? , starting tj =25c ? 2, repetitive rating : pulse width lim ited by maximum junction temperature 3, pulse test : pulse width 300 s, duty cycle 2% 4, essentially independent of operating temperature ? www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 3 ? ? typical characteristics www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 4 ? ? typical characteristics (continued) www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 5 ? ? www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 6 ? ? www.wisdom-technologies.com
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